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4V Drive Nch MOSFET (Corresponds to AEC-Q101) - RSD175N10FRA

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

FAQ 
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número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RSD175N10FRATL Active CPT3 2500 2500 Taping sim
 
especificações:
Grade Automotive
Common Standard AEC-Q101
Package Code TO-252(DPAK)
JEITA Package SC-63
Package Size[mm] 6.5x9.5(t=2.3)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 100
Drain Current ID[A] 17.5
RDS(on)[Ω] VGS=4V(Typ.) 0.085
RDS(on)[Ω] VGS=4.5V(Typ.) 0.08
RDS(on)[Ω] VGS=10V(Typ.) 0.075
RDS(on)[Ω] VGS=Drive (Typ.) 0.085
Total gate charge Qg[nC] 24.0
Power Dissipation (PD)[W] 20.0
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · 4V-drive type
    · Nch Power MOSFET
    · Fast Switching Speed
    · Drive circuits can be simple
    · Parallel use is easy
    · Pb Free/RoHS Compliant
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors