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Nch 30V 35A Middle Power MOSFET - RS1E350BN

RS1E350BN is MOSFET for switching application that features Low on-resistance.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RS1E350BNTB Active HSOP8(Single) 2500 2500 Taping sim
 
especificações:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 35.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0018
RDS(on)[Ω] VGS=10V (Typ.) 0.0012
RDS(on)[Ω] VGS=Drive (Typ.) 0.0018
Total gate charge Qg[nC] 95.0
Power Dissipation (PD)[W] 3.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on - resistance.
    ・ High Power small mold Package (HSOP8).
    ・ Pb-free lead plating ; RoHS compliant
    ・ Halogen Free
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors