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Nch 30V 60A Middle Power MOSFET - RS1E180BN

RS1E180BN is low on-resistance and high power small mold package MOSFET for switching application.

Additional Information  
FAQ 
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RS1E180BNTB Active HSOP8(Single) 2500 2500 Taping sim
 
especificações:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Applications Switching, Motor
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 60.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0049
RDS(on)[Ω] VGS=10V (Typ.) 0.0035
RDS(on)[Ω] VGS=Drive (Typ.) 0.0049
Total gate charge Qg[nC] 23.0
Power Dissipation (PD)[W] 25.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
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características:
    • Low on - resistance.
    • High Power small mold Package (HSOP8).
    • Pb-free lead plating ; RoHS compliant.
    • Halogen Free.
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Pin Configuração:
Pin Configration
 
 
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Dados técnicos
Spice Model (lib)

Thermal Model (lib)

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors