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RS1E150GN - RS1E150GN

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RS1E150GNTB Active HSOP8(Single) 2500 2500 Taping sim
 
especificações:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 40.0
RDS(on)[Ω] VGS=10V (Typ.) 0.0067
RDS(on)[Ω] VGS=Drive (Typ.) 0.0088
Total gate charge Qg[nC] 4.8
Power Dissipation (PD)[W] 22.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
    • Low on - resistance
    • High Power Package (HSOP8)
    • Pb-free lead plating; RoHS compliant
    • Halogen Free
    • 100% Rg and UIS Tested
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors