Downloading...
 
product-image
 

RS1E130GN - RS1E130GN

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RS1E130GNTB Active HSOP8(Single) 2500 2500 Taping sim
 
especificações:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Applications Power Supply
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 35.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0117
RDS(on)[Ω] VGS=10V (Typ.) 0.0089
RDS(on)[Ω] VGS=Drive (Typ.) 0.0117
Total gate charge Qg[nC] 3.9
Power Dissipation (PD)[W] 22.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
    • Low on - resistance
    • High Power Package (HSOP8)
    • Pb-free lead plating; RoHS compliant
    • Halogen Free
    • 100% Rg and UIS Tested
 
 
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aTransistors
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
RS1E350GN 4.5V Drive Nch MOSFET HSOP8(Single)   inquérito
RS1G300GN 4.5V Drive Nch MOSFET HSOP8(Single)   comprar
RF4E070BN 4.5V Drive Nch MOSFET HUML2020L8(Single)   comprar
RF4E070GN 4.5V Drive Nch MOSFET HUML2020L8(Single)   comprar
RF4E080BN 4.5V Drive Nch MOSFET HUML2020L8(Single)   comprar
RF4E080GN 4.5V Drive Nch MOSFET HUML2020L8(Single)   comprar
New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors