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Nch 30V 39A Middle Power MOSFET - RQ3E180BN

RQ3E180BN is low on-resistance and high power package MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RQ3E180BNTB Active HSMT8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 39.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0037
RDS(on)[Ω] VGS=10V (Typ.) 0.0028
RDS(on)[Ω] VGS=Drive (Typ.) 0.0037
Total gate charge Qg[nC] 37.0
Power Dissipation (PD)[W] 20.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating ; RoHS compliant.
    • Halogen Free.
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors