Nch 30V 39A Middle Power MOSFET - RQ3E180BN

RQ3E180BN is low on-resistance and high power package MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RQ3E180BNTB Active HSMT8 3000 3000 Taping sim
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Applications Switching, Motor
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 39.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0037
RDS(on)[Ω] VGS=10V (Typ.) 0.0028
RDS(on)[Ω] VGS=Drive (Typ.) 0.0037
Total gate charge Qg[nC] 37.0
Power Dissipation (PD)[W] 20.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating ; RoHS compliant.
    • Halogen Free.
Pin Configuração:
Pin Configration
Outros Novo / Atualizado produtos em relação aTransistors
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
RS1E281BN Nch 30V 80A Power MOSFET HSOP8(Single)   inquérito
RQ6E040XN Nch 30V 4A Small Signal MOSFET TSMT6   inquérito
RS1E301GN Nch 30V 80A Power MOSFET HSOP8(Single)   inquérito
RS1E321GN Nch 30V 80A Power MOSFET HSOP8(Single)   inquérito
RQ6E035TN Nch 30V 3.5A Small Signal MOSFET TSMT6   inquérito
RQ6E045TN Nch 30V 4.5A Small Signal MOSFET TSMT6   inquérito
New Products:
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors