Nch 30V 18A Middle Power MOSFET - RQ3E180AJ

RQ3E180AJ is MOSFET for switching application that features Low on-resistance.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
RQ3E180AJTB Active HSMT8 3000 3000 Taping inquiry sim
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 18.0
RDS(on)[Ω] VGS=2.5V (Typ.) 0.0045
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0035
RDS(on)[Ω] VGS=Drive (Typ.) 0.0045
Total gate charge Qg[nC] 39.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 2.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
    • Low on - resistance.
    • Small Surface Mount Package.
    • Pb-free lead plating; RoHS compliant.
Pin Configuração:
Pin Configration
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors