Nch 30V 21A Power MOSFET - RQ3E120BN

High power package RQ3E120BN is middle power MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RQ3E120BNTB Active HSMT8 3000 3000 Taping sim
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Applications Switching, Motor
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 21.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0086
RDS(on)[Ω] VGS=10V (Typ.) 0.0066
RDS(on)[Ω] VGS=Drive (Typ.) 0.0086
Total gate charge Qg[nC] 14.0
Power Dissipation (PD)[W] 16.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
Pin Configuração:
Pin Configration
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New Products:
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors