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Nch 30V 7A Middle Power MOSFET - RQ3E070BN

RQ3E070BN is high power package(HSMT8) MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RQ3E070BNTB Active HSMT8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 7.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.029
RDS(on)[Ω] VGS=10V (Typ.) 0.02
RDS(on)[Ω] VGS=Drive (Typ.) 0.029
Total gate charge Qg[nC] 4.6
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on - resistance.
    ・ High Power Package (HSMT8).
    ・ Pb-free lead plating ; RoHS compliant
    ・ Halogen Free
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors