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Pch -20V -30A Middle Power MOSFET - RQ3C150BC (Under Development)

The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch.

FAQ 
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Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RQ3C150BCTB Under Development HSMT8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Pch
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -30.0
RDS(on)[Ω] VGS=1.8V (Typ.) 0.0088
RDS(on)[Ω] VGS=2.5V (Typ.) 0.0061
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0048
RDS(on)[Ω] VGS=Drive (Typ.) 0.0088
Total gate charge Qg[nC] 60.0
Power Dissipation (PD)[W] 20.0
Drive Voltage[V] -1.8
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
 
 
Pin Configuração:
Pin Configration
 
 
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors