4V Drive Nch MOSFET - RQ1E100XN

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RQ1E100XNTR Active TSMT8 3000 3000 Taping sim
Grade Standard
Package Code TSMT8
Package Size[mm] 3.0x2.8(t=0.8)
Applications Switching
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 10.0
RDS(on)[Ω] VGS=4V (Typ.) 0.01
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0095
RDS(on)[Ω] VGS=10V (Typ.) 0.0075
RDS(on)[Ω] VGS=Drive (Typ.) 0.01
Total gate charge Qg[nC] 12.7
Power Dissipation (PD)[W] 1.5
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · 4V-drive type
    · Nch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
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New Products:
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors