Casa | IGBT | Field Stop Trench IGBT | RGT8NS65D
 
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650V 4A Field Stop Trench IGBT - RGT8NS65D

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RGT8NS65DGTL Active LPDS 1000 1000 Taping sim
 
especificações:
VCES [V] 650
IC(100°C)[A] 4
VCE(sat) (Typ.) [V] 1.65
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 65
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • 1) Low Collector - Emitter Saturation Voltage
    2) Low Switching Loss
    3) Short Circuit Withstand Time 5us
    4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
    5) Pb - free Lead Plating ; RoHS Compliant
 
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Operation Notes

For Surface Mount Type

Operation Notes

For Lead Type

Condition Of Soldering

For Surface Mount Type