Casa | IGBT | Field Stop Trench IGBT | RGT50TS65D

650V 25A Field Stop Trench IGBT - RGT50TS65D

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
RGT50TS65DGC11 Active TO-247N 450 450 Bulk inquiry sim
VCES [V] 650
IC(100°C)[A] 25
VCE(sat) (Typ.) [V] 1.65
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 174
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • 1) Low Collector - Emitter Saturation Voltage
    2) Low Switching Loss
    3) Short Circuit Withstand Time 5us
    4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
    5) Pb - free Lead Plating ; RoHS Compliant
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation