Casa | IGBT | Field Stop Trench IGBT | RGT50NS65D(TO-262)

650V 25A Field Stop Trench IGBT - RGT50NS65D(TO-262) (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
RGT50NS65DGC9 Active TO-262 1000 1000 Tube inquiry sim
VCES [V] 650
IC(100°C)[A] 25
VCE(sat) (Typ.) [V] 1.65
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 194
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
    • Low Collector-Emitter Saturation Voltage
    • Low Switching Loss
    • Short Circuit Withstand Time 5µs
    • Built in Very Fast & Soft Recovery FRD (RFN-Series)
    • Pb-free Lead Plating; RoHS Compliant
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
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