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650V 50A Field Stop Trench IGBT - RGS00TS65D (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

FAQ 
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Please contact us for purchase because there is no distribution Inventory.--- inquérito
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RGS00TS65DC11 Active TO-247N 450 30 Tube sim
 
especificações:
VCES [V] 650
IC(100°C)[A] 50
VCE(sat) (Typ.) [V] 1.65
Built-in Diode FRD
Pd [W] 326
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
    • Low Collector - Emitter Saturation Voltage
    • Short Circuit Withstand Time 8μs
    • Qualified to AEC-Q101
    • Built in Very Fast & Soft Recovery FRD
    • Pb - free Lead Plating ; RoHS Compliant
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation