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10V Drive Nch MOSFET - R8008ANXPower MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
especificações:
Grade | Standard |
Package Code | TO-220FM |
Package Size[mm] | 15.1x10.1 (t=4.6) |
Applications | Power Supply |
Number of terminal | 3 |
Polarity | Nch |
Drain-Source Voltage VDSS[V] | 800 |
Drain Current ID[A] | 8.0 |
RDS(on)[Ω] VGS=10V (Typ.) | 0.79 |
RDS(on)[Ω] VGS=Drive (Typ.) | 0.79 |
Total gate charge Qg[nC] | 39.0 |
Power Dissipation (PD)[W] | 50.0 |
Drive Voltage[V] | 10.0 |
Mounting Style | Leaded type |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 150 |
características:
- · 10V-drive type
· Nch Power MOSFET
· Fast Switching Speed
· Drive circuits can be simple
· Parallel use is easy
· Pb Free/RoHS Compliant
aplicações:
Pin Configuração:
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Dados técnicos
Reference Circuit
DC-DC Quasi-Resonant Converter Vo=12V Io=10A
SPICE Simulation Evaluation Circuit Data
DC-DC Quasi-Resonant Converter Vo=12V Io=10A
NE Handbook Series
For Power Device
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors