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10V Drive Nch MOSFET - R6047ENZ1

R6047ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6047ENZ1C9 Active TO-247 450 450 Bulk sim
 
especificações:
Grade Standard
Package Code TO-247
Package Size[mm] 21.1x15.9(t5.0)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 47.0
RDS(on)[Ω] VGS=10V (Typ.) 0.066
RDS(on)[Ω] VGS=Drive (Typ.) 0.066
Total gate charge Qg[nC] 145.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • 1) Low on-resistance.
    2) Fast switching speed.
    3) Gate-source voltage(VGSS)guaranteed to be ±30V.
    4) Drive circuits can be simple.
    5) Parallel use is easy.
    6) Pb-free lead plating; RoHS compliant.
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
Reference Circuit

DC-DC LLC Resonant Converter Vo=50V Io=50A

SPICE Simulation Evaluation Circuit Data

DC-DC LLC Resonant Converter Vo=50V Io=50A

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors