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10V Drive Nch MOSFET - R6035ENZ

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6035ENZC8 Active TO-3PF 360 360 Bulk sim
 
especificações:
Grade Standard
Package Code TO-3PF
Package Size[mm] 26.5x15.5(t=5.5)
Applications Power Supply
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 35.0
RDS(on)[Ω] VGS=10V (Typ.) 0.092
RDS(on)[Ω] VGS=Drive (Typ.) 0.092
Total gate charge Qg[nC] 110.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
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Dados técnicos
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors