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10V Drive Nch MOSFET - R6030ENZ1

Nch 600V 30A Power MOSFET

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6030ENZ1C9 Active TO-247 450 450 Bulk sim
 
especificações:
Grade Standard
Package Code TO-247
Package Size[mm] 21.07x15.94(t=5.02)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 30.0
RDS(on)[Ω] VGS=10V (Typ.) 0.115
RDS(on)[Ω] VGS=Drive (Typ.) 0.115
Total gate charge Qg[nC] 85.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
 
 
Dados técnicos
Reference Circuit

DC-DC Phase-Shift Resonant Converter Vo=50V Io=50A

SPICE Simulation Evaluation Circuit Data

DC-DC Phase-Shift Resonant Converter Vo=50V Io=50A

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors