Downloading...
 
product-image
 

10V Drive Nch MOSFET - R6024ENZ1

R6024ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6024ENZ1C9 Active TO-247 450 450 Bulk sim
 
especificações:
Grade Standard
Package Code TO-247
Package Size[mm] 21.1x15.9(t5.0)
Applications Power Supply
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 24.0
RDS(on)[Ω] VGS=10V (Typ.) 0.15
RDS(on)[Ω] VGS=Drive (Typ.) 0.15
Total gate charge Qg[nC] 70.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • 1) Low on-resistance.
    2) Fast switching speed.
    3) Gate-source voltage(VGSS)guaranteed to be ±30V.
    4) Drive circuits can be simple.
    5) Parallel use is easy.
    6) Pb-free lead plating; RoHS compliant.
 
 
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aTransistors
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
R6030ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6035ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6020ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6047ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6076ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6004ENJ 10V Drive Nch MOSFET LPTS(D2PAK)   comprar
New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Part Explanation

For Transistors