10V Drive Nch MOSFET - R6011ENX

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
R6011ENX Active TO-220FM 500 500 Bulk sim
Grade Standard
Package Code TO-220FM
Package Size[mm] 15.1x10.1 (t=4.6)
Applications Power Supply
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 11.0
RDS(on)[Ω] VGS=10V (Typ.) 0.34
RDS(on)[Ω] VGS=Drive (Typ.) 0.34
Total gate charge Qg[nC] 32.0
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
Outros Novo / Atualizado produtos em relação aTransistors
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
R6030ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6035ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6020ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6024ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6047ENZ1 10V Drive Nch MOSFET TO-247   comprar
R6076ENZ1 10V Drive Nch MOSFET TO-247   comprar
New Products:
Dados técnicos
SPICE Simulation Evaluation Circuit Data

DC-DC Phase-Shift Resonant Converter Vo=12V Io=100A

NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors