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10V Drive Nch MOSFET - R6009ENX

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6009ENX Active TO-220FM 500 500 Bulk sim
 
especificações:
Grade Standard
Package Code TO-220FM
Package Size[mm] 15.1x10.1 (t=4.6)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 9.0
RDS(on)[Ω] VGS=10V (Typ.) 0.5
RDS(on)[Ω] VGS=Drive (Typ.) 0.5
Total gate charge Qg[nC] 23.0
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
 
 
Dados técnicos
Reference Circuit

PFC Critical Current Mode 1P Pin=200W

Reference Circuit

PFC Critical Current Mode 2P-Interleave Pin=400W

Reference Circuit

PFC Critical Current Mode 3P-Interleave Pin=600W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 1P Pin=200W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 2P-Interleave Pin=400W

SPICE Simulation Evaluation Circuit Data

PFC Critical Current Mode 3P-Interleave Pin=600W

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors