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10V Drive Nch MOSFET - R6009ENJ

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6009ENJTL Active LPTS(D2PAK) 1000 1000 Taping sim
 
especificações:
Grade Standard
Package Code TO-263(D2PAK)
JEITA Package SC-83
Package Size[mm] 10.1x13.1(t=4.5)
Applications Power Supply
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 9.0
RDS(on)[Ω] VGS=10V (Typ.) 0.5
RDS(on)[Ω] VGS=Drive (Typ.) 0.5
Total gate charge Qg[nC] 23.0
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 10.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Gate-source voltage (VGSS) guaranteed to be ±20V.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
 
 
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New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors