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10V Drive Nch MOSFET - R6008FNX

MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet variousneeds in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
R6008FNX Active TO-220FM 500 500 Bulk sim
 
especificações:
Grade Standard
Package Code TO-220FM
Package Size[mm] 15.1x10.1 (t=4.6)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 8.0
RDS(on)[Ω] VGS=10V (Typ.) 0.73
RDS(on)[Ω] VGS=Drive (Typ.) 0.73
Total gate charge Qg[nC] 20.0
Power Dissipation (PD)[W] 50.0
Drive Voltage[V] 10.0
Trr (Typ.)[ns] 67
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · 4V-drive type
    · Nch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors