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4V Drive Nch+Nch MOSFET - QS8K21

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
QS8K21TR Active TSMT8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code TSMT8
Package Size[mm] 3.0x2.8(t=0.8)
Number of terminal 8
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 45
Drain Current ID[A] 4.0
RDS(on)[Ω] VGS=4V (Typ.) 0.053
RDS(on)[Ω] VGS=4.5V (Typ.) 0.048
RDS(on)[Ω] VGS=10V (Typ.) 0.038
RDS(on)[Ω] VGS=Drive (Typ.) 0.053
Total gate charge Qg[nC] 5.4
Power Dissipation (PD)[W] 1.5
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · 4V-drive type
    · Nch+Nch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors