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4V Drive Nch+Nch MOSFET - QS8K11Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
especificações:
Grade | Standard |
Package Code | TSMT8 |
Package Size[mm] | 3.0x2.8(t=0.8) |
Applications | Switching |
Number of terminal | 8 |
Polarity | Nch+Nch |
Drain-Source Voltage VDSS[V] | 30 |
Drain Current ID[A] | 3.5 |
RDS(on)[Ω] VGS=4V (Typ.) | 0.05 |
RDS(on)[Ω] VGS=4.5V (Typ.) | 0.045 |
RDS(on)[Ω] VGS=10V (Typ.) | 0.035 |
RDS(on)[Ω] VGS=Drive (Typ.) | 0.05 |
Total gate charge Qg[nC] | 3.3 |
Power Dissipation (PD)[W] | 1.5 |
Mounting Style | Surface mount |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 150 |
características:
- · 4V-drive type
· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
aplicações:
Pin Configuração:
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New Products:
Dados técnicos
NE Handbook Series
For Power Device
Condition Of Soldering
For Surface Mount Type
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors