4V Drive Nch+Nch MOSFET - QS8K11

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Data Sheet

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Additional Information

FAQ

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.

número de peça	Estado de Condição	pacote	Quantidade Unidade	Quantidade mínima Package	tipo de embalagem	RoHS
QS8K11TCR	Active	TSMT8	3000	3000	Taping	sim

especificações:

Grade	Standard
Package Code	TSMT8
Package Size[mm]	3.0x2.8(t=0.8)
Applications	Switching
Number of terminal	8
Polarity	Nch+Nch
Drain-Source Voltage VDSS[V]	30
Drain Current ID[A]	3.5
RDS(on)[Ω] VGS=4V (Typ.)	0.05
RDS(on)[Ω] VGS=4.5V (Typ.)	0.045
RDS(on)[Ω] VGS=10V (Typ.)	0.035
RDS(on)[Ω] VGS=Drive (Typ.)	0.05
Total gate charge Qg[nC]	3.3
Power Dissipation (PD)[W]	1.5
Mounting Style	Surface mount
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

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características:

· 4Ｖ-drive type
· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant

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