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Complex Transistor (BIP+BIP) - QS5Y2

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

FAQ 
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Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
QS5Y2TR Active TSMT5 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-25T
Package Size[mm] 2.9x2.8(t=1.0Max.)
Number of terminal 5
Polarity NPN+PNP
Collector-Emitter voltage VCEO1[V] 50.0
Collector current(continuous) IC1[A] 3.0
Collector-Emitter voltage VCEO2[V] -50.0
Collector current(continuous) IC2[A] -3.0
hFE 180 to 450
hFE (Min.) 180
hFE (Max.) 450
Mounting Style Surface mount
Equivalent (Single Part) 2SAR533P / 2SCR533P
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Compact complex bipolar power transistor
    · For DC-DC converter
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors