Downloading...
 
product-image
 

-20V Pch+Pch Middle Power MOSFET - QH8JA1 (New)

The Middle Power MOSFET QH8JA1 is suitable for switching applications.

FAQ 
comprar 
Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
QH8JA1TCR Active TSMT8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code TSMT8
Package Size[mm] 3.0x2.8(t=0.8)
Number of terminal 8
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -5.0
RDS(on)[Ω] VGS=1.8V (Typ.) 0.049
RDS(on)[Ω] VGS=2.5V (Typ.) 0.035
RDS(on)[Ω] VGS=4.5V (Typ.) 0.028
RDS(on)[Ω] VGS=Drive (Typ.) 0.049
Total gate charge Qg[nC] 10.2
Power Dissipation (PD)[W] 1.5
Drive Voltage[V] -1.8
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
    • Low on - resistance.
    • Small surface mount package (TSMT8).
    • -1.8V Drive.
    • Pb-free lead plating; RoHS compliant
 
 
Pin Configuração:
Pin Configration
 
 
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors