Downloading...
 
product-image
 

Complex Transistor (BIP+BIP) - IMT18

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
IMT18T110 Active SMT6 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-457
JEITA Package SC-74
Package Size[mm] 2.9x2.8(t=1.1)
Number of terminal 6
Polarity PNP+PNP
Collector-Emitter voltage VCEO1[V] -12.0
Collector current(continuous) IC1[A] -0.5
Collector-Emitter voltage VCEO2[V] -12.0
Collector current(continuous) IC2[A] -0.5
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
Mounting Style Surface mount
Equivalent (Single Part) 2SA2018 / 2SA2018
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Ultra-compact complex bipolar transistor
    · For pre-amplifier
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aTransistors
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
EMT18 Complex Transistor (BIP+BIP) EMT6   comprar
UMT18N Complex Transistor (BIP+BIP) UMT6   comprar
New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors