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30V Nch+Nch Power MOSFET - HS8K11

HS8K11 is standard MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
HS8K11TB Active HSML3030L10 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code HSML3030L10
Package Size[mm] 3.0x3.0(t=0.6)
Number of terminal 10
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 7.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0208
RDS(on)[Ω] VGS=10V (Typ.) 0.0128
RDS(on)[Ω] VGS=Drive (Typ.) 0.0208
Total gate charge Qg[nC] 5.7
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Low on-resistance.
    · Pb-free lead plating; RoHS compliant.
    · Halogen Free.
 
 
Pin Configuração:
Pin Configration
 
 
 
 
Dados técnicos
Reference Circuit

DC-DC Step-Down Converter 1P Vo=5V Io=5A

Reference Circuit

DC-DC Step-Down Converter 2P-Interleave Vo=5V Io=10A

Reference Circuit

DC-DC Step-Down Converter 3P-Interleave Vo=5V Io=15A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 1P Vo=5V Io=5A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 2P-Interleave Vo=5V Io=10A

SPICE Simulation Evaluation Circuit Data

DC-DC Step-Down Converter 3P-Interleave Vo=5V Io=15A

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors