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2.5V Drive Pch+SBD MOSFET - ES6U42

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
ES6U42T2R Active WEMT6 8000 8000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-563T
JEITA Package SC-120
Package Size[mm] 1.6x1.6(t=0.6)
Number of terminal 6
Polarity Pch+Schottky
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -1.0
RDS(on)[Ω] VGS=2.5V (Typ.) 0.57
RDS(on)[Ω] VGS=4V (Typ.) 0.31
RDS(on)[Ω] VGS=4.5V (Typ.) 0.28
RDS(on)[Ω] VGS=Drive (Typ.) 0.57
Total gate charge Qg[nC] 2.1
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] -2.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors