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Não recomendado para New Design

1.5V Drive Nch+SBD MOSFET - ES6U2

 
Recommended Products
N / D
 
 
especificações:
número de peça ES6U2T2R
Estado de Condição NRND
pacote WEMT6
Quantidade Unidade 8000
Quantidade mínima Package 8000
tipo de embalagem Taping
Constituição Lista de Materiais inquiry
RoHS sim
Grade Standard
Package Code SOT-563T
JEITA Package SC-120
Package Size[mm] 1.6x1.6(t=0.6)
Number of terminal 6
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 20
Drain Current ID[A] 1.5
RDS(on)[Ω] VGS=1.5V (Typ.) 0.3
RDS(on)[Ω] VGS=2.5V (Typ.) 0.17
RDS(on)[Ω] VGS=4.5V (Typ.) 0.13
RDS(on)[Ω] VGS=Drive (Typ.) 0.3
Total gate charge Qg[nC] 1.8
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] 1.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Pin Configuração:
Pin Configration
 
 
Dados técnicos
NE Handbook Series

For Power Device

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Part Explanation

For Transistors