Complex Transistor(BIP+BIP) - EMT1

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Data Sheet

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Additional Information

FAQ

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.

número de peça	Estado de Condição	pacote	Quantidade Unidade	Quantidade mínima Package	tipo de embalagem	RoHS
EMT1T2R	Active	EMT6	8000	8000	Taping	sim

especificações:

Grade	Standard
Package Code	SOT-563
JEITA Package	SC-107C
Package Size[mm]	1.6x1.6(t=0.5)
Number of terminal	6
Polarity	PNP+PNP
Collector-Emitter voltage VCEO1[V]	-50.0
Collector current(continuous) IC1[A]	-0.15
Collector-Emitter voltage VCEO2[V]	-50.0
Collector current(continuous) IC2[A]	-0.15
hFE	120 to
hFE (Min.)	120
Mounting Style	Surface mount
Equivalent (Single Part)	2SA1037AK / 2SA1037AK
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

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características:

· Ultra-compact complex bipolar transistor
· For pre-amplifier
· Small Surface Mount Package
· Pb Free/RoHS Compliant

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