1.8V Drive Nch+Nch MOSFET - EM6K6

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
EM6K6T2R Active EMT6 8000 8000 Taping inquiry sim
Grade Standard
Package Code SOT-563
JEITA Package SC-107C
Package Size[mm] 1.6x1.6(t=0.5)
Number of terminal 6
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 20
Drain Current ID[A] 0.3
RDS(on)[Ω] VGS=1.8V (Typ.) 0.8
RDS(on)[Ω] VGS=2.5V (Typ.) 0.8
RDS(on)[Ω] VGS=4V (Typ.) 0.7
RDS(on)[Ω] VGS=Drive (Typ.) 0.8
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] 1.8
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · Low voltage(1.8V) drive type
    · Nch+Nch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors