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SiC Power Module - BSM300D12P2E001

BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BSM300D12P2E001 Active E 4 4 Tray sim
 
especificações:
Drain-source Voltage[V] 1200
Drain Current[A] 300.0
Total Power Dissipation[W] 1875
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
características:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
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Dados técnicos
SPICE Simulation Evaluation Circuit Data

DC-DC Half-Bridge CCCV Charger Po=50kW

SPICE Simulation Evaluation Circuit Data

DC-DC Half-Bridge CCCV Charger Po=50kW (for Thermal evaluation)

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog