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SiC Power Module - BSM180D12P2E002 (New)

This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

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Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BSM180D12P2E002 Active E 4 4 Tray sim
 
especificações:
Drain-source Voltage[V] 1200
Drain Current[A] 204.0
Total Power Dissipation[W] 1360
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
características:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
New Products:
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog