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Silicon carbide Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BSM180D12P2C101 Active C 12 12 Tray sim
 
especificações:
Common Standard -
Drain-source Voltage[V] 1200
Drain Current[A] 204.0
Total Power Dissipation[W] 1360
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
características:
  • ・SiC MOSFET-only power module
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
    ・Low body diode Qrr and trr
 
 
Pin Configuração:
Pin Configration
 
 
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