Casa | SiC Power Devices | SiC Power Module | BSM180D12P2C101
 
Downloading...

SiC Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BSM180D12P2C101 Active C 12 12 Tray sim
 
especificações:
Drain-source Voltage[V] 1200
Drain Current[A] 180.0
Total Power Dissipation[W] 1130
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
características:
  • ・SiC MOSFET-only power module
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
    ・Low body diode Qrr and trr
 
 
Pin Configuração:
Pin Configration
 
 
Cliques recentes:
Outros Novo / Atualizado produtos em relação aSiC Power Devices
New Products:
 
 
Dados técnicos
SPICE Simulation Evaluation Circuit Data

DC-AC Half-Bridge Ih Inverter Po=20kW

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog