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SiC Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
BSM180D12P2C101 Active C 12 12 Tray sim
Drain-source Voltage[V] 1200
Drain Current[A] 180.0
Total Power Dissipation[W] 1130
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
  • ・SiC MOSFET-only power module
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
    ・Low body diode Qrr and trr
Pin Configuração:
Pin Configration
Dados técnicos
SPICE Simulation Evaluation Circuit Data

DC-AC Half-Bridge Ih Inverter Po=20kW

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

Product Catalog File

SiC Power Device Catelog

NE Handbook Series

For Power Device