Casa | SiC Power Devices | SiC Power Module | BSM120D12P2C005
 
Downloading...
 
product-image
 

SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BSM120D12P2C005 Active C 12 12 Tray sim
 
especificações:
Common Standard -
Drain-source Voltage[V] 1200
Drain Current[A] 134.0
Total Power Dissipation[W] 935
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
características:
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
 
 
Pin Configuração:
Pin Configration
 
 
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aSiC Power Devices
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
BSM180C12P2E202 Silicon carbide Power Module E   inquérito
BSM400D12P3G002 Silicon carbide Power Module G   inquérito
BSM600D12P3G001 Silicon carbide Power Module G   inquérito
BSM180C12P3C202 Silicon carbide Power Module C   inquérito
BSM300C12P3E201 Silicon carbide Power Module E   inquérito
BSM120C12P2C201 Silicon carbide Power Module C   inquérito
New Products:
 
 
Dados técnicos
SPICE Simulation Evaluation Circuit Data

DC-AC Full-Bridge PS Inverter Po=15kW

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog