Casa | SiC Power Devices | SiC Power Module | BSM120C12P2C201

Silicon carbide Power Module - BSM120C12P2C201

This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
BSM120C12P2C201 Active C 12 12 Tray sim
Drain-source Voltage[V] 1200
Drain Current[A] 134.0
Total Power Dissipation[W] 935
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Chopper
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
Outros Novo / Atualizado produtos em relação aSiC Power Devices
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
BSM180C12P2E202 Silicon carbide Power Module E   inquérito
BSM400D12P3G002 Silicon carbide Power Module G   inquérito
BSM600D12P3G001 Silicon carbide Power Module G   inquérito
BSM180C12P3C202 Silicon carbide Power Module C   inquérito
BSM300C12P3E201 Silicon carbide Power Module E   inquérito
BSM180D12P2E002 Silicon carbide Power Module E   inquérito
New Products:
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog