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Silicon carbide Power Module - BSM120C12P2C201

This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
BSM120C12P2C201 Active C 12 12 Tray sim
Common Standard -
Drain-source Voltage[V] 1200
Drain Current[A] 134.0
Total Power Dissipation[W] 935
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Chopper
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
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