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600V High voltage High & Low-side, Gate Driver - BS2103F (New)

The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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BS2103F-E2 Active SOP8 2500 2500 Taping inquiry sim
 
especificações:
Grade Standard
Channel 1
High-side floating supply voltage [V] 600
Min Output Current Io+ [mA] 60
Min Output Current Io- [mA] 130
Turn-on/off time (Typ.) [ns] 220
Dead time (Typ.) [ns] 160
Offset supply leakage current (Max.) [µA] 50
Vcc(Min.)[V] 10.0
Vcc(Max.)[V] 18.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
características:
    • Floating Channels for Bootstrap Operation to +600V
    • Gate drive supply range from 10V to 18V
    • Built-in Under Voltage Lockout for Both Channels
    • 3.3V and 5.0V Input Logic Compatible
    • Matched Propagation Delay for Both Channels
    • Output in phase with input
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
Application Note

Thermal Resistance

Package Information

For Transistors

Condition Of Soldering

For Surface Mount Type