600V High voltage High & Low-side, Gate Driver - BS2103F

The BS2103F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
BS2103F-E2 Active SOP8 2500 2500 Taping sim
Grade Standard
Channel 2
High-side floating supply voltage [V] 600
Min Output Current Io+ [mA] 60
Min Output Current Io- [mA] 130
Turn-on/off time (Typ.) [ns] 220
Dead time (Typ.) [ns] 160
Offset supply leakage current (Max.) [µA] 50
Vcc(Min.)[V] 10.0
Vcc(Max.)[V] 18.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
    • Floating Channels for Bootstrap Operation to +600V
    • Gate drive supply range from 10V to 18V
    • Built-in Under Voltage Lockout for Both Channels
    • 3.3V and 5.0V Input Logic Compatible
    • Matched Propagation Delay for Both Channels
    • Output in phase with input
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Dados técnicos
BS2103F Application Note

Application for driving N-channel MOSFET and IGBT

Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.