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600V High voltage High & Low-side, Gate Driver - BS2101F

The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
BS2101F-E2 Active SOP-8 2500 2500 Taping sim
 
especificações:
Grade Standard
Channel 2
High-side floating supply voltage [V] 600
Min Output Current Io+ [mA] 60
Min Output Current Io- [mA] 130
Turn-on/off time (Typ.) [ns] 220
Offset supply leakage current (Max.) [µA] 50
Vcc(Min.)[V] 10.0
Vcc(Max.)[V] 18.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
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características:
    • Floating Channels for Bootstrap Operation to +600V
    • Gate drive supply range from 10V to 18V
    • Built-in Under Voltage Lockout for Both Channels
    • 3.3V and 5.0V Input Logic Compatible
    • Matched Propagation Delay for Both Channels
    • Output in phase with input
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Dados técnicos
Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.

Part Explanation

For ICs