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SPI BUS EEPROM - BR25G128FJ-3BR25G128FJ-3 is a 128Kbit Serial EEPROM of SPI BUS Interface.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
especificações:
Grade | Standard |
I/F | SPI BUS |
Density [bit] | 128K |
Bit Format [Word x Bit] | 16K x 8 |
Package | SOP-J8 |
Operating Temperature (Min.)[°C] | -40 |
Operating Temperature (Max.)[°C] | 85 |
Vcc(Min.)[V] | 1.6 |
Vcc(Max.)[V] | 5.5 |
Circuit Current (Max.)[mA] | 8.0 |
Standby Current (Max.)[μA] | 2.0 |
Write Cycle (Max.)[ms] | 5.0 |
Input Frequency (Max.)[Hz] | 20M |
Endurance (Max.)[Cycle] | 106 |
Data Retention (Max.)[Year] | 100 |
características:
- · High Speed Clock Action up to 20MHz (Max)
· Wait Function by HOLDB Terminal
· Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
· 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
· Up to 64 Bytes in Page Write Mode.
· For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
· Self-timed Programming Cycle
· Low Current Consumption
·At Write Action (5V) : 0.5mA (Typ)
·At Read Action (5V) : 2.0mA (Typ)
·At Standby Action (5V) : 0.1µA (Typ)
· Address Auto Increment Function at Read Action
· Prevention of Write Mistake
·Write Prohibition at Power On
·Write Prohibition by Command Code (WRDI)
·Write Prohibition by WPB Pin
·Write Prohibition Block Setting by Status Registers (BP1, BP0)
·Prevention of Write Mistake at Low Voltage
· More than 100 years Data Retention.
· More than 1 Million Write Cycles.
· Bit Format 16K×8
· Initial Delivery Data
·Memory Array: FFh
·Status Register: WPEN, BP1, BP0 : 0
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Dados técnicos
Thermal Resistance
The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.
Part Explanation
For ICs