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105°C Operation SPI BUS EEPROM - BR25A512FVT-3M (New)

BR25A512-3M is a 512Kbit Serial EEPROM of SPI BUS Interface.

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BR25A512FVT-3MGE2 Active TSSOP-B8 3000 3000 Taping inquiry sim
 
especificações:
Grade Automotive
I/F SPI BUS
Density [bit] 512K
Bit Format [Word x Bit] 64K x 8
Package TSSOP-B8
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 105
Vcc(Min.)[V] 2.5
Vcc(Max.)[V] 5.5
Circuit Current (Max.)[mA] 4.0
Standby Current (Max.)[μA] 10.0
Write Cycle (Max.)[ms] 5.0
Input Frequency (Max.)[Hz] 10M
Endurance (Max.)[Cycle] 106
Data Retention (Max.)[Year] 100
características:
    • High Speed Clock Action up to 10MHz (Max)
    • Wait Function by HOLDB Terminal
    • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
    • 2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use
    • Up to 128 Bytes in Page Write Mode
    • For SPI BUS Interface (CPOL, CPHA) = (0, 0), (1, 1)
    • Self-timed Programming Cycle
    • Low Current Consumption
      ·At Write Action (5V) : 0.7mA (Typ)
      ·At Read Action (5V) : 2.4mA (Typ)
      ·At Standby Action (5V) : 0.1µA (Typ)
    • Address Auto Increment Function at Read Action
    • Prevention of Write Mistake
      ·Write Prohibition at Power On
      ·Write Prohibition by Command Code (WRDI)
      ·Write Prohibition by WPB Pin
      ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
      ·Prevention of Write Mistake at Low Voltage
    • More than 100 years Data Retention
    • More than 1 Million Write Cycles
    • Bit Format 64K×8
    • Initial Delivery Data
      Memory Array : FFh
      Status Register: WPEN, BP1, BP0 : 0
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
Application Note

Thermal Resistance