3rd Generation SiC Schottky Barrier Diodes
SCS3xxA Series

Low Vf High Surge Resistance SiC SBDs

Overview

TO-263AB,TO-220ACP package

Utilizing SiC Schottky barrier diodes (SBD) instead of fast recovery diodes (FRD) in PFC circuits in power supplies improves efficiency during continuous mode operation.
ROHM's SCS3xxA series of 3rd generation SiC SBDs maintain the industry's lowest VF characteristics of its 2nd generation products while providing higher surge current resistance.
Optimized for power supply PFC circuits.

SiC Support Page

Key Feature 1: Low VF and high surge resistance ideal for power supply PFC applications

A JBS (Junction Barriery Schottky) structure is used to achieve higher surge resistance.
In addition, VF characteristics is improved over 2nd generation SiC SBDs, along with leakage characteristics, making it possible develop higher performance products.

Voltage-Surge Current Characteristics
  ROHM
3rd
Generation
SiC-SBD
ROHM
2nd
Generation
SiC-SBD
Absolute Maximum Ratings
Surge Current
Resistance
10msec, sin wave
TO-220AC package
82A 40A
Electrical Characteristics
VF(V)
Typ.
Tj=25°C 1.35 1.35
Tj=150°C 1.44 1.55
IR(µA)
Typ.
Tj=25°C 0.03 2
Tj=150°C 2 30

Key Feature 2: High efficiency achieved utilizing low-loss SiC SBDs

Switching Currrent Waveform Characteristics

Compared to silicon FRDs, SiC SBDs feature faster reverse recovery time and lower switching loss, contributing to higher device efficiency.

Applications

Applications

Lineup

Package Max.
Voltage
Forward Current (IF)
2A 4A 6A 8A 10A
TO-220ACP

TO-220ACP

650V ☆SCS302AP ☆SCS304AP SCS306AP SCS308AP SCS310AP
TO-263AB D2pak (LTPL)

TO-263AB
D2pak (LTPL)

☆SCS302AJ ☆SCS304AJ ☆SCS306AJ ☆SCS308AJ ☆SCS310AJ

☆: Under Development