3rd Generation SiC Schottky Barrier Diodes
Utilizing SiC Schottky barrier diodes (SBD) instead of fast recovery diodes (FRD) in PFC circuits in power supplies improves efficiency during continuous mode operation.
ROHM's SCS3xxA series of 3rd generation SiC SBDs maintain the industry's lowest VF characteristics of its 2nd generation products while providing higher surge current resistance.
Optimized for power supply PFC circuits.
Key Feature 1: Low VF and high surge resistance ideal for power supply PFC applications
A JBS (Junction Barriery Schottky) structure is used to achieve higher surge resistance.
In addition, VF characteristics is improved over 2nd generation SiC SBDs, along with leakage characteristics, making it possible develop higher performance products.
| ROHM |
| ROHM |
|Absolute Maximum Ratings|
| Surge Current |
10msec, sin wave
| VF(V) |
| IR(µA) |
Key Feature 2: High efficiency achieved utilizing low-loss SiC SBDs
Compared to silicon FRDs, SiC SBDs feature faster reverse recovery time and lower switching loss, contributing to higher device efficiency.
☆: Under Development