New Hybrid MOS Combines the Best Characteristics of MOSFETs and IGBTs
Improved energy savings across the entire current range

April, 2 2013

ROHM has recently announced the development of a new high voltage transistor design that significantly reduces power consumption in power supplies and PFC circuits used in servers, industrial equipment, and home appliances. This new Hybrid MOS combines the device structures of superjunction MOSFETs and IGBTs, leading to a breakthrough product that features the high-speed switching, low current characteristics of MOSFETs with the high voltage resistance properties of IGBTs. The result is significant energy savings across the full current range.

In recent years, with the increasing drive towards greater energy savings and due to changes in energy conservation regulations there is a growing trend of listing the APF (Annual Performance Factor) for home appliances, which signifies the energy consumption efficiency close to the real-world value, driving the movement towards improved energy savings during steady state operation. Typically, in order to achieve high efficiency operation in devices an efficient power supply is required. In these cases a superjunction MOSFET is used for low current and high-speed switching in the PFC circuit. However, for industrial equipment and the like requiring high-temperature, high current operation superjunction MOSFETs cannot be used. Instead, less efficient IGBTs are employed.

Hybrid MOS

In response, ROHM adopted a new structure that controls the backside of wafers and takes advantage of superjunction technology, making it possible to maintain the characteristics of superjunction MOSFETs at large currents and under higher temperatures. The result is high performance operation, including high-speed switching and low current characteristics that improve not only the rated region, but expands the applicable range of devices as well. In addition, in high power applications where IGBTs are used for high temperature, high current operation, the advantages of high-speed switching and low-current drive are provided for significantly improving energy savings.

Key Features

1. Significantly greater energy savings across the entire current range (from low current to rated current value)
Device adoption requires clearing the rated value region. Wafer backside control assists during high temperature, large current operation. Performance equivalent to IGBTs is guaranteed, even when instantaneous large current flow is required.

Significantly greater energy savings across the entire current range
2. Superior performance characteristics vs. superjunction MOSFETs and IGBTs
Superior performance characteristics vs. superjunction MOSFETs and IGBTs

Availability: Samples (Summer 2013)

Terminology

  • Superjunction MOSFET
    A type of power MOSFET that expands the 3D depletion layer for considerably lower loss than conventional products.
  • IGBT (Insulated Gate Bipolar Transistor)
    Combines a MOSFET and bipolar transistor MOSFET, taking advantage of the characteristics of each.
  • PFC (Power Factor Correction) Circuit
    A circuit that limits the displacement current generated in power supplies (switching) in electronic devices to a predetermined value.
  • APF (Annual Performance Factor)
    The energy consumption efficiency when using the AC (as an example) for a year. The larger the value the greater the energy savings.