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SiC Power Devices

Silicon Carbide (SiC) is emerging as the most viable candidate in the search for a next-generation, low-loss semiconductor element due to its low ON resistance and superior high temperature, high frequency, and high voltage performance when compared to silicon.

ROHM is at the forefront in the development of SiC power devices and modules, improving power savings in a number of applications. These applications include:

-High-efficiency inverters in DC/AC converters for solar/wind power supplies
-Electric/hybrid vehicles power conversion
-Power inverters for industrial equipment and air conditioners
-X-ray generators
-Thin-film coating processes

Our portfolio includes SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules. These compact and efficient semiconductor devices have the potential to substantially reduce end-product size.

FAQ 
  • SiC Schottky Barrier Diodes (68)

    The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.

     
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  • SiC MOSFET (20)

    In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.

     
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  • SiC Power Module (12)

    Switching loss of Full-SiC power module integrating SiC MOSFETs and SBDs is significantly lower than conventional IGBT modules. These new modules make high frequency operation above 100kHz possible (unlike conventional products).

     
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  • SiC Schottky Barrier Diodes Bare Die (10)

    The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

  • SiC MOSFET Bare Die (18)

    In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.
    For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.