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  • What are some features of SiC power devices?
    • SiC features 10x the breakdown field strength compared with silicon, resulting in breakdown voltages in the thousands of volts.
      In addition, ON resistance per unit area is considerably lower, significantly improving power loss.
      In order to minimize the increase in ON resistance associated with higher breakdown voltages, silicon IGBTs are primarily used. However, SiC has been shown to provide superior high-speed switching performance.