BSM180D12P3C007

1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET
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BSM180D12P3C007

BSM180D12P3C007
1200V, 180A, Half bridge, Full SiC-Power Module with Trench MOSFET

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

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Product Detail

 
Part Number | BSM180D12P3C007
Status | Recommended
Package | C
Unit Quantity | 12
Minimum Package Quantity | 12
Packing Type | Corrugated Cardboard
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

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