* RDX100N60 NMOSFET model
* Date: 2007/07/25
******************D G S
.SUBCKT RDX100N60 1 2 3
M1   11 22 3 3 MOS_N
C1         1 3 16p
D1         3 1 DDS
R1        1 11 RTH .430
D2       11 21 DDG
D3       22 21 DDG
R2        2 22 8
.MODEL MOS_N NMOS
+ LEVEL=3
+ L=2.0000E-6
+ W=1
+ KP=8.1485E-6
+ RS=10.000E-3
+ RD=0
+ VTO=3.6844
+ RDS=24.000E6
+ TOX=2.0000E-6
+ CGSO=1700p
+ CGDO=30p
+ CBD=0
+ RG=0
+ N=2
+ RB=1.0000E-3
+ GAMMA=0
+ ETA=100.00E-6
+ KAPPA=0
.MODEL DDS D
+ IS=204.53E-12
+ N=1.1903
+ RS=3.4189E-3
+ IKF=2.2764
+ CJO=854.66E-12
+ M=1.0797
+ VJ=7.7753
+ BV=600
+ TT=720.00E-9
.MODEL DDG D
+ CJO=4.4871E-9
+ M=1.6041
+ VJ=2.2728
+ BV=600
.MODEL RTH RES
+ TC1=0.009
+ TC2=0.00004
.ENDS RDX100N60