* R5016ANX NMOSFET model
* Date: 2008/01/28
*****************D G S
.SUBCKT R5016ANX 1 2 3
M1   11 22 3 3 MOS_N
D1         3 1 DDS
R1        1 11 RTH .186
D2       11 21 DDG
D3       22 21 DDG
R2        2 22 30
.MODEL MOS_N NMOS
+ LEVEL=3
+ L=2.0000E-6
+ W=1
+ KP=23.244E-6
+ RS=10.000E-3
+ RD=0
+ VTO=3.5882
+ RDS=5.0000E6
+ TOX=2.0000E-6
+ CGSO=1.7n
+ CGDO=20p
+ CBD=0
+ RG=0
+ N=2
+ RB=1.0000E-3
+ GAMMA=0
+ ETA=100.00E-6
+ KAPPA=0
.MODEL DDS D
+ IS=271.86E-12
+ N=1.2186
+ RS=4.7785E-3
+ IKF=3.2261
+ CJO=7.2846E-9
+ M=1.2612
+ VJ=2.8763
+ BV=500
+ TT=550n
.MODEL DDG D
+ CJO=3.5974E-9
+ M=1.5008
+ VJ=1.2640
+ BV=500
.MODEL RTH RES
+ TC1=0.01
+ TC2=0.00005
.ENDS R5016ANX